
| With few exceptions, all SAW devices
consist of thin-film metal structures fabricated on the surface
of a piezoelectric substrate. For example, the interdigital
transducer (IDT) is an array of narrow parallel electrodes
connected alternately to two bus bars. The substrate material
is usually a single crystal of quartz, lithium niobate or
lithium tantalate. |
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The generated wave is guided along the top surface of the substrate,
with its amplitude decaying into the depth. In order for the wave
to behave as a true surface wave, the substrate needs to be at
least a few wavelengths thick, so that the wave amplitude is negligible
at the lower surface.
Practical substrates satisfy this need easily and these usually
have a thickness of 0.5 or 1.0 mm., chosen to give adequate strength
to tolerate stresses involved in fabrication and operation. However,
there is market demand for very thin SAW filters driven by the
need for smaller cellular phones, and the use of 0.35 mm
piezoelectric substrates is becoming common.
The strips often have a function which is purely electrical,
i.e. they serve simply to apply or detect electric fields at the
surface. For this purpose, the film thickness only needs to be
enough to minimize losses due to resistivity. Typically, the thickness
will be in the range 300 to 3000 A. However, in some devices mechanical
effects are used - the mechanical motion of the electrodes causes
a disturbance of the wave which sets up reflections. This effect
is employed in resonators and in SPUDT
filters, and in these cases the film thickness is more
critical. The metal film is nearly always aluminum, chosen because
it has acoustic properties fairly similar to those of the substrate
materials. Titanium is sometimes used under the aluminium to improve
the power handling characteristics of the device.
SAW devices are made using photolithography, which gives accurate
control of the electrode geometry a very important consideration.
This is one reason for the success of the technology, another
being that the crystal substrates have very reproducible properties,
so that devices with very predictable performance can be produced.
The electrode width is a crucial factor. Photolithography is limited
by the wavelength of the light used to reproduce the pattern on
the substrate. The minimum linewidth is in the region of the light
wavelength. For ultraviolet light, as used in large-scale production,
the minimum linewidth is about 0.3 µm. This corresponds
to /4,
and for a typical velocity of 3500 m/s it gives a maximum frequency
of about 3 GHz. Narrower linedwidths are obtainable using special
techniques, for example electron beam exposure, but these are
not applicable to large-scale manufacturing.

Photolithography is the key part of the fabrication process.
Three types are in common practice: wet etching, lift-off and
reactive ion etching (RIE). For illustration, the following describes
the wet etching process, illustrated in Fig.1.
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The substrate, a circular 4" wafer of crystalline quartz,
lithium niobate or lithium tantalate, is first carefully
cleaned, and then a thin film of aluminium is deposited.
This deposition is done at COM DEV by evaporation.
The thickness of the aluminium is very important and is
a predetermined parameter arising from the design; the thickness
uniformity across the profile of the wafer is also very
important to ensure consistent behaviour from device to
device and COM DEV is able to hold this tolerance to 1%
maximum.
The wafer is then coated with a photoresist solution and
is spun at high speed so that the resist becomes a thin
film on the wafer. Baking then solidifies this film. Often
an anti-reflective coating is applied under the photoresist.
The wafer is then exposed to ultraviolet light through
a photomask or reticle which defines the geometry of the
pattern to be produced on the wafer. The reticle pattern
is fabricated to be several times larger than the desired
pattern to be exposed on the wafer and the exposure process
is done by projection on a machine called a Stepper, through
a high quality lens system.
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The Stepper can also be programmed to expose a variety
of different device designs on one wafer. The exposure process
is critical, and the wafer must be held perfectly flat since
the depth of focus may be as small as one µm.
Following this, the resist is chemically developed in the
wafer track so that regions exposed to light are removed,
leaving exposed areas of metal.
At COM DEV, the remaining areas of exposed aluminium are
dissolved chemically using a reactive ion etch process,
often called dry etch.
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The remaining photoresist is then stripped,
and this is the last step in the photolithography process;
the result is a patterned wafer containing the SAW devices.
The number of devices on a 4 wafer can vary between
one or two (for specialized devices or very low frequency
filters) to several thousand in the case of high frequency
low loss rf filters. |
In the process described above, it can be easily understood that
virtually any arbitrary shape can therefore reproduced in the
metal film on the substrate. The types of patterns are only limited
by the designers imagination.

As with IC fabrication, the SAW manufacturing process is well
suited to high-volume production, and this can bring substantial
economies of scale. Metal film deposition is done on up to 20
wafers at a time, and on each wafer the lithography produces many
devices simultaneously. Also, processes for die sawing, packaging,
wire bonding, testing etc. can be highly automated.
Primary input materials are the wafers, masks and pack ages.
These are all available and kept in stock at COM DEV. New
designs are synthesized quickly with proprietary in-house software
and masks can be made rapidly. A variety of package styles and
sizes is available, including DIL and nine standard COM DEV SMT
packages are available. (SM3030 through SM24690)
It should be borne in mind that SAW devices vary substantially.
For example, typical lengths vary from 2 mm to around 10 cm, and
costs tend to vary accordingly, as well as being dependent on
the performance and testing required.
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